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  Datasheet File OCR Text:
 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION With TO-3PFa package Complement to type 2SD1488 High fT Satisfactory linearity of hFE Wide area of safe operation APPLICATIONS For high power amplifier applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
2SB1057
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICP PARAMETER

Collector-base voltage
INCH
Collector-emitter voltage
Emitter-base voltage
ANG
EMIC ES
Open emitter Open base Open collector
CONDITIONS
OND
TOR UC
VALUE -150 -150 -5 -9 -15
UNIT V V V A A
Collector current
Collector current-peak TC=25ae
100 W 3
PC
Collector power dissipation
Tj Tstg
Junction temperature Storage temperature
150 -55~150 ae
ae
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance CONDITIONS IC=-7A ;IB=-0.7A IC=-7A ; VCE=-5V VCB=-150V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-7A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-10V 20 40 20 450 20 MIN TYP.
2SB1057
SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE -2 hFE -3 COB fT
MAX -2.0 -1.8 -50 -50
UNIT V V |I |I A A
200
hFE-2 classifications R 40-80 Q
Transition frequency

60-120
pF
IN
ANG CH
P 100-200
EMIC ES
DUC ON
TOR
MHz
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1057
SEM GE
HAN INC
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance:A
0.30mm)
3


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